Gallium Arsenide and Related Compounds 1991, Proceedings of the Eighteenth INT Symposium, 9-12 September 1991, Seattle, USA

Gallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.

G.B. Stringfellow (University of Utah)

Plenary papers; epitaxy, mainly molecular beam; MESFETs and MODFETs; processing; characterization; HBTs and InGaAlAs FETs; ordering; quantum wells; opto-electronics; OMPVE; superlattices.