Silicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Contributor contact details Preface Part I: Introduction Chapter 1: Structural properties of silicon-germanium (SiGe) nanostructures Abstract: 1.1 Introduction 1.2 Crystal structure 1.3 Lattice parameters 1.4 Phase diagram 1.5 Critical thickness 1.6 Structural characterization by X-ray diffraction 1.7 Future trends 1.8 Acknowledgement Chapter 2: Electronic band structures of silicon-germanium (SiGe) alloys Abstract: 2.1 Band structures 2.2 Strain effects 2.3 Effective mass 2.4 Conclusion Part II: Formation of nanostructures Chapter 3: Understanding crystal growth mechanisms in silicon-germanium (SiGe) nanostructures Abstract: 3.1 Introduction 3.2 Thermodynamics of crystal growth 3.3 Fundamental growth processes 3.4 Kinetics of epitaxial growth 3.5 Heteroepitaxy Chapter 4: Types of silicon-germanium (SiGe) bulk crystal growth methods and their applications Abstract: 4.1 Introduction 4.2 Growth methods 4.3 Application of silicon-germanium (SiGe) bulk crystal to heteroepitaxy 4.4 Conclusion Chapter 5: Silicon-germanium (SiGe) crystal growth using molecular beam epitaxy Abstract: 5.1 Introduction 5.2 Techniques 5.3 Nanostructure formation by molecular bean epitaxy (MBE) 5.4 Future trends Chapter 6: Silicon-germanium (SiGe) crystal growth using chemical vapor deposition Abstract: 6.1 Introduction 6.2 Epitaxial growth techniques - chemical vapor deposition (CVD) (ultra high vacuum CVD (UHVCVD), low pressure CVD (LPCVD), atmospheric pressure CVD (APCVD), plasma enhanced CVD (PECVD)) 6.3 Silicon-germanium (SiGe) heteroepitaxy by chemical vapor deposition (CVD) 6.4 Doping of silicon-germanium (SiGe) 6.5 Conclusion and future trends Chapter 7: Strain engineering of silicon-germanium (SiGe) virtual substrates Abstract: 7.1 Introduction 7.2 Compositionally graded buffer 7.3 Low-temperature buffer 7.4 Ion-implantation buffer 7.5 Other methods and future trends Chapter 8: Formation of silicon-germanium on insulator (SGOI) substrates Abstract: 8.1 Introduction: demand for virtual substrate and (Si)Ge on insulator (SGOI) 8.2 Formation of (Si)Ge on insulator (SGOI) by the Ge condensation method 8.3 Extension toward Ge on insulator 8.4 Conclusion 8.5 Acknowledgment Chapter 9: Miscellaneous methods and materials for silicon-germanium (SiGe) based heterostructures Abstract: 9.1 Introduction 9.2 Oriented growth of silicon-germanium (SiGe)on insulating films for thin film transistors and 3-D stacked devices 9.3 Heteroepitaxial growth of ferromagnetic Heusler alloys for silicon-germanium (SiGe)-based spintronic devices 9.4 Conclusion Chapter 10: Modeling the evolution of germanium islands on silicon(001) thin films Abstract: 10.1 A few considerations on epitaxial growth modeling 10.2 Introduction to Stranski-Krastanow (SK) heteroepitaxy 10.3 Onset of Stranski-Krastanow (SK) heteroepitaxy 10.4 Beyond the Stranski-Krastranow (SK) onset: SiGe intermixing 10.5 Beyond the Stranski-Krastanow (SK) onset: vertical and horizontal ordering for applications 10.6 Future trends: ordering Ge islands on pit-patterned Si(001) Chapter 11: Strain engineering of silicon-germanium (SiGe) micro- and nanostructures Abstract: 11.1 Introduction 11.2 Growth insights 11.3 Island engineering 11.4 Rolled-up nanotechnology 11.5 Potential applications 11.6 Sources of further information and advice 11.7 Acknowledgments Part III: Material properties of SiGe nanostructures Chapter 12: Self-diffusion and dopant diffusion in germanium (Ge) and silicon-germanium (SiGe) alloys Abstract: 12.1 Introduction 12.2 Diffusion mechanism 12.3 Self-diffusion in germanium (Ge) 12.4 Self-diffusion in silicon-germanium (SiGe) alloys 12.5 Silicon-germanium (Si-Ge) interdiffusion 12.6 Dopant diffusion in germanium (Ge) 12.7 Dopant diffusion in silicon-germanium (SiGe) alloys 12.8 Dopant segregation 12.9 Conclusion and future trends Chapter 13: Dislocations and other strain-induced defects in silicon-germanium (SiGe) nanostructures Abstract: 13.